elektronische bauelemente SSG4410 10 a, 30v, r ds(on) 13.5 m ?? n-ch enhancement mode power mosfet 23-dec-2010 rev. b page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen free description the SSG4410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? dynamic dv/dt rating ? simple drive requirement ? repetitive avalanche rated ? fast switching marking package information package mpq leadersize sop-8 3k 13? inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v i d @ t a = 25c 10 a continuous drain current, v gs @ 10v i d @ t a = 70c 8 a pulsed drain current 1 i dm 50 a total power dissipation p d 2.5 w linear derating factor 0.02 w / c operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient (max.) r ja 50 c / w sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. 4410sc ????? ?? ? = date code g s s s d d d d
elektronische bauelemente SSG4410 10 a, 30v, r ds(on) 13.5 m ?? n-ch enhancement mode power mosfet 23-dec-2010 rev. b page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions drain-source breakdown voltage bv dss 30 - - v v gs =0v, i d =250ua breakdown voltage temperature coefficient bv dss / t j - 0.037 - v / c reference to 25c, i d =1ma gate threshold voltage v gs(th) 1.0 - 3.0 v v ds =v gs , i d =250ua forward transconductance g fs - 20 - s v ds =15v, i d =10a gate-source leakage current i gss - - 100 na v gs =20v drain-source leakage current(t j =25c) - - 1 a v ds =30v, v gs =0v drain-source leakage current(t j =55c) i dss - - 25 a v ds =24v, v gs =0v - 11.5 13.5 v gs =10v, i d =10a static drain-source on-resistance r ds(on) - 16.5 20 m ? v gs =4.5v, i d =5a total gate charge 2 q g - 20 - gate-source chagre q gs - 3 - gate-drain (?miller?) change q gd - 11 - nc v ds =15v, i d =10a, v gs =5v turn-on delay time 2 t d(on) - 7.5 - rise time t r - 10.2 - turn-off delay time t d(off) - 29 - fall time t f - 33 - ns v ds =25v, v gs =5v i d =1a, r d =25 ? , r g =3.3 ? input capacitance c iss - 955 - output capacitance c oss - 555 - reverse transfer capacitance c rss - 204 - pf v ds =15v v gs =0v f=1.0mhz source-drain diode forward on voltage 2 v sd - - 1.3 v i s =2.3a, v gs = 0v, t j =25c continuous source current (body diode) i s - - 2.3 a v d = v g = 0v, v s = 1.3v pulsed source current (body diode) 1 i sm - - 50 a notes: 1. pulse width limited by safe operating area. 2. pulse width 300 s, duty cycle 2 QQ .
elektronische bauelemente SSG4410 10 a, 30v, r ds(on) 13.5 m ?? n-ch enhancement mode power mosfet 23-dec-2010 rev. b page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSG4410 10 a, 30v, r ds(on) 13.5 m ?? n-ch enhancement mode power mosfet 23-dec-2010 rev. b page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente SSG4410 10 a, 30v, r ds(on) 13.5 m ?? n-ch enhancement mode power mosfet 23-dec-2010 rev. b page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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